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SSM6K209FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K209FE
High-Speed Switching Applications Power Management Switch Applications
* * 4.0V drive Low ON-resistance: Ron = 145m (max) (@VGS = 4.0 V) Ron = 74m (max) (@VGS = 10 V)
1.60.05 1.00.05 0.5 0.5 1 2 3 1.60.05 1.20.05
UNIT: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 20 2.5 5.0 500 150 -55~150 Unit V V
6 5 4 0.20.05
Unit V A A V S m pF nC ns V
0.550.05
mW C C
1, 2, 5, 6 : Drain 3 : Gate : Source
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Note:
ES6
JEDEC JEITA TOSHIBA
4

2-2N1A
Weight: 3.0 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDS = 15V, ID = 2.5 A VGS = 10 V VDD = 15 V, ID = 1.0 A, VGS = 0~4.0 V, RG = 10 ID = -2.5 A, VGS = 0 V (Note2) VDS = 15 V, VGS = 0 V, f = 1 MHz Test Condition ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = -20 V VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 5 V, ID = 1.5 A ID = 1.5 A, VGS = 10 V ID = 1.0 A, VGS = 4.0 V (Note2) (Note2) (Note2) Min 30 15 1.2 2.7 Typ. 5.3 54 85 320 55 44 7.7 6.0 1.7 17 12 -0.9 Max 1 1 2.6 74 145 -1.2
Drain-source forward voltage
Note 2: Pulse test
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2007-11-01
0.120.05
A
SSM6K209FE
Switching Time Test Circuit
(a) Test Circuit
4.0 V 0 10 s OUT VDD = 15 V RG = 10 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C
(b) VIN
4.0 V 10%
90%
IN RG
0V
(c) VOUT
VDD
90% 10% tr ton toff tf
VDD
VDS (ON)
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
NW
1 2 3 1 2 3
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM6K209FE
5 10 V
ID - VDS
5.0 V 4.0V Common Source Ta = 25 C 10 Common Source VDS = 5 V
ID - VGS
(A)
ID
3
ID
3.0 V
(A) Drain current
4
1
Drain current
0.1 Ta = 100 C 0.01 - 25 C 0.001 25 C
2
1 VGS = 2.5 V 0
0
0.2
0.4
0.6
0.8
1
0.0001 0
2.0
4.0
Drain-source voltage
VDS
(V)
Gate-source voltage
VGS
(V)
RDS (ON) - VGS
300 ID =1.5A Common Source 300
RDS (ON) - ID
Common Source Ta = 25C
Drain-source ON-resistance RDS (ON) (m)
200
Drain-source ON-resistance RDS (ON) (m)
200
100
Ta = 100 C 25 C
100
4.0V
VGS = 10 V 0
- 25 C 0 0 5 10 15 20 0 1 2 3 4 5
Gate-source voltage
VGS
(V)
Drain current
ID
(A)
RDS (ON) - Ta
300 3.0
Vth - Ta
Common Source
Vth (V)
Common Source
VDS = 5V ID = 1 mA 2.0
Drain-source ON-resistance RDS (ON) (m)
1.0 A / 4.0V 100
Gate threshold voltage
200
1.0
ID = 1.5 A / VGS = 10 V 0 -50
0
50
100
150
0 -50
0
50
100
150
Ambient temperature
Ta
(C)
Ambient temperature
Ta
(C)
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2007-11-01
SSM6K209FE
10
|Yfs| - ID
Common Source
IDR - VDS
10 Common Source VGS = 0 V D 1 G IDR
(S)
Yfs
Ta = 25C 3
Forward transfer admittance
Drain reverse current
IDR
(A)
VDS = 5 V
S 0.1 Ta =100 C 25 C 0.01
1
0.3
-25 C 0.1 0.01 0.1 1 10 0.001 0 -0.5 -1.0 -1.5
Drain current
ID
(A)
Drain-source voltage
VDS
(V)
1000
C - VDS
1000
t - ID
Common Source VDD = 15 V VGS = 0 4.0 V Ta = 25 C RG = 10
500
toff Ciss
(pF)
(ns)
300
tf 100
C
Capacitance
100 50 30 Common Source Ta = 25C f = 1 MHz VGS = 0 V 1 10
Switching time
t
Coss Crss
10
ton tr
10 0.1
100
1 0.01
0.1
1
10
Drain-source voltage
VDS
(V)
Drain current
ID
(A)
Dynamic Input Characteristic
10 Common Source
(V)
ID = 2.5A 8 Ta = 25C
VGS Gate-Source voltage
6
VDS=15V 4
VDS=24V
2
0 0 2 4 6 8 10
Total Gate Charge
Qg
(nC)
4
2007-11-01
SSM6K209FE
rth 1000 Single Pulse Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , Cu Pad : 645 mm2)
- tw
1000
PD - Ta Drain power dissipation PD (mW)
Mounted on FR4 board (25.4mm x 25.4mm x 1.6t , 2 Cu Pad : 645 mm )
Transient thermal impedance rth (C/W)
800
100
600
400
10
200
1 0.001
0.01
0.1
1
10
100
1000
0 -40
-20
0
20
40
60
80
100
120 140 160
Pulse width
tw
(s)
Ambient temperature
Ta
(C)
5
2007-11-01
SSM6K209FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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